Distribution of impurities implanted in InSb and InAs before and after annealing

Abstract Experimental estimation of distributions of implanted ions was done for Be + , Mg + and S + . Energies of ions were up to 250 keV and doses up to 10 15 cm −2 . Experimental distributions were measured by the use of ion microprobe MIQ-256 (CAMECA/Riber). Simulation of impurity and defect distributions for 10000 ions of each species was carried out by using TRIM-94 code. It was found that mean ranges R p of experimental and calculated distributions were very similar. Range stragglings ΔR p of experimental distributions exceeded the calculated ones for all species. The difference between the range stragglings of experimental and calculated distributions was up to 35%. It was found that after 550°C post-implatation annealing of sulphur implanted layers there was no broadening of ion implanted distributions. It is believed that sulphur in the implantation process, interacting with defects, took places in As sublattice sites and even annealing did not change sulphur state in InAs and motion was not observed.