Structural and optical properties of GaSbBi/GaSb quantum wells [Invited]

GaSbBi/GaSb quantum wells (QWs) with Bi content up to 10.1% were grown using molecular beam epitaxy. High crystalline quality and clear interfaces were confirmed by high resolution transmission electron microscopy. The Bi distribution was investigated using energy dispersive X-ray spectroscopy. Room temperature photoluminescence (PL) reveals that the peak energy redshifts at a rate of 32 meV/Bi%, consistent with the theoretical predication using the 8-band kp model. From the temperature dependent PL, it was found that the temperature-insensitivity of the transition from the GaSbBi QW improved with increasing Bi content.