Electroluminescence from perovskite LEDs with the structure of Ag/Spiro-OMeTAD/CH3NH3PbI3/TiO2/FTO

Abstract The perovskite light-emitting diodes (Pe-LEDs) with the structure of Ag/Spiro-OMeTAD/CH 3 NH 3 PbI 3 /TiO 2 /FTO were synthesized, where the CH 3 NH 3 PbI 3 perovskite layer was deposited by a two-step spin-coating process. A dominant near-infrared electroluminescence (EL) at 773 nm was detected from the Pe-LEDs under forward bias at room temperature. The origin and mechanism of the EL were discussed in comparison with the photoluminescence (PL) spectra, and it was attributed to the radiative recombination of electrons and holes confined in the CH 3 NH 3 PbI 3 emissive layer. Moreover, the corresponding energy band diagrams was proposed to illustrate the carrier transport mechanism in the Pe-LED device.