Metalorganic chemical vapor deposition growth of high-quality and highly uniform strained InGaAs quantum wells in a high-speed rotating-disk reactor

Abstract High-quality and highly uniform strained InGaAs/ AlGaAs quantum-well structures have been grown successfully metalorganic chemical vapor deposition (MOCVD) using a high-speed rotating-disk reactor in which growth on three wafers of 3-inch diameter can be carried out simultaneously. By rotating the susceptor disk at a speed as high as 1000 rpm, the excellent uniformity of the quantum-well structure has been obtained. It is ascertained that the controllability of the InAs composition in InGaAs layers is high enough at a growth temperature of 675°C, which is almost the same as the optimum growth temperature for AlGaAs layers. As a result, InGaAs/ AlGaAs quantum-well lasers emitting at 980 nm have been obtained without changing the growth temperature. The fabricated lasers exhibit an excellent uniformity of the lasing wavelength (±0.09%) and a high output power (448 mW).