An enhanced approach to numerical modeling of heavily irradiated silicon devices

Abstract In this paper we discuss an enhanced approach to the analysis of radiation-damaged silicon devices, with reference to numerical modelling implemented in a general-purpose device simulator. In particular, the emission and capture mechanism of deep levels are accounted for by means of Shockley–Read–Hall theory and shallow-level sensitivity to radiation is considered by means of a donor removal model. The effects produced by regions containing very high defect concentrations (referred to as “clusters”) are considered by calculating the direct charge exchange between two deep levels. The resulting analysis technique has been validated and calibrated by means of comparison with experimental measurements carried out on irradiated samples. The model is shown to provide comprehensive and accurate results for several radiation damage phenomena.