New Si–H infrared absorption peak corresponding to the hydrogen-defect shallow donors in silicon

A new Si–H infrared absorption peak at 2016 cm−1 is found to be related to the hydrogen-defect shallow donors apart from the 2162 cm−1 peak, indicating that the shallow donors do not correspond to only one kind of defect structure. The micro-structure of the complexes causing the Si–H IR peaks and hydrogen-defect shallow donors is discussed.