High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN template layer

A high-indium-content InGaN quantum-well structure was grown on a strain-relaxed InGaN template to reduce structural strain induced by lattice mismatch. The results show that the InGaN template, following a nanosculpting process, can maintain the good crystal quality of the underlying GaN layer and provide a new lattice parameter for pseudomorphically growing a high-indium-content quantum-well structure, and the fourth-order satellite peak of the multi-quantum-well structure is clearly distinguishable. Atom misalignment, a strain gradient, and a composition undulation along the growth direction in the quantum-well structure were not observed by high-resolution transmission electron microscopy and selected area diffraction.