Old Web
English
Sign In
Acemap
>
Paper
>
Three dimensional boron distribution in heavily doped silicon epilayers resolved by atom probe tomography
Three dimensional boron distribution in heavily doped silicon epilayers resolved by atom probe tomography
2011
K. Hoummada
F. Dahlem
T. Kociniewski
J. Boulmer
Christiane Dubois
G. Prudon
E. Bustarret
Hervé Courtois
D. Debarre
Dominique Mangelinck
Keywords:
Atom probe
Boron
Doping
Materials science
Silicon
Analytical chemistry
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]