Method for fabricating Au-Al0.30Ga0.70N lateral Schottky photodiode

Au-Al 0.30 Ga 0.70 N Lateral Schottky photodiode was fabricated by an electrical breakdown of a single Schottky barrier of metal-semiconductor-metal Au-Al 0.30 Ga 0.70 N film rocking curves are about 523.7 arcsec for the (00.2) plane reflection and about 989.5 arcsec for the (10.5) plane reflection. Dark current of the device is 1.2nA at the reverse bias of 1 V at room temperature. Analysis of the measured characteristics showed the ideality factor n , the zero-bias barrier height Φ B0 and the serial resistance R S are equal to 1.8, 0.80eV and 9.8KΩ, respectively. Ideality factor away from 1 and reverse leakage currents can be attributed from crystalline defects in the materials.