Sub-Micron CMOS / MOS-Bipolar Hybrid TFTs for System Displays

The characteristics of sub-micron CMOS- and MOS-bipolar hybrid TFTs fabricated on large-grain poly-Si films are presented. The MOS and hybrid TFTs with 0.5 mum-gate or base length exhibit an f max of 10 and 5.5 GHz respectively, showing great potential for the integration of analog functions, such as the LVDS front-end interface.