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Operation Principle and Structure of normally-off Floating Gate GaN HEMT with Injection Gate
Operation Principle and Structure of normally-off Floating Gate GaN HEMT with Injection Gate
2020
Kenshi Nagumo
Daiki Kimoto
Tomoyuki Suwa
Akinobu Teramoto
Riichiro Shirota
Shinichiro Tskatani
Rihito Kuroda
Shigetoshi Sugawa
Keywords:
Optoelectronics
Materials science
High-electron-mobility transistor
normally off
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