The demonstration of Carbon Nano-Tubes (CNTs) as a promising high Aspect Ratio (>25) Through Silicon Vias (TSVs) material for the vertical connection in the high dense 3DICs

With the excellent material properties of Carbon Nano-tubes (CNTs) developed in this work (Coefficient of Thermal Expansion~-2 x 10-6 K-1, Resistivity~10-6 Ω-m, Young’s modulus~1000 GPa, and thermal conductivity ~800 Wm-1K-1), the real 3D integrated circuits (ICs) system with CNTs as the high aspect ratio (>25)/small diameters ( 5 H 5 ) 2 reactant, (2) Optimized wafer bonding process, (3) Non-mask laser engrave patterning, and (4) wafer transfer technology by a thermal release tape/ethylene viny acetate processes provide the useful solution for the applications of CNTs as a vertical connection material in the near coming high-density 3D device.