SiC-based phototransistor with a tunnel MOS emitter
1999
Au/tunnel-thin SiO/sub 2//n-6H-SiC structures have first been fabricated and shown to operate as tunnel MOS emitter phototransistors under reverse bias and UV-irradiation conditions (current gain reached 3-7). This paper contains details of sample preparation, measured device characteristics, and their interpretation.
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