Diffusion of Copper in Titanium Zirconium Nitride Thin Films

Honeywell Electronic Materials Star Center, Sunnyvale, California, USAThe diffusion coefficient of Cu in~Ti, Zr!N was measured by X-ray diffraction~XRD! and four-point probe~FPP! analyses afterannealing Cu/~Ti, Zr!N/Si multilayered samples in the temperature range of 500-900°C. Cu diffusion in~Ti, Zr!N had componentsfrom both the grain boundaries and the lattice based on diffusional analysis. This study suggests that for the measurement of thediffusion coefficient of Cu, FPP analysis is more precise and sensitive than XRD analysis. Additionally,~Ti, Zr!N has better Cudiffusion barrier properties than those of TaN and TiN.© 2004 The Electrochemical Society. @DOI: 10.1149/1.1644355# All rights reserved.Manuscript received May 1, 2003. Available electronically January 22, 2004.