High performance GeSi quantum-well PMOS on SIMOX

A new quantum-well GeSi-SIMOX PMOSFET is presented. The device consists of a Si/Ge/sub 0.3/Si/sub 0.7//Si quantum well, which is grown pseudomorphically on a SIMOX substrate. The effective channel mobility of this device has been found to be 90% higher than that of an identically processed conventional SIMOX PMOSFET. >