Performances of phase-change recording disks based on GaSbTe media

Phase-change optical disks with novel GaSbTe recording media were prepared in the DVD+RW format and evaluated by a dynamic tester at 1X speed. The studied compositions locate along the Sb/sub 7/Te/sub 3/-GaSb and Sb/sub 2/Te/sub 3/-GaSb pseudo-binary tielines. The disks were prepared by an RF co-sputtering method. Enhanced recrystallization has been demonstrated in the disks with Sb/sub 7/Te/sub 3/-rich recording layer. An approximated composition Ga/sub 2/Sb/sub 5/Te/sub 3/ even exhibited a nearly complete erasure (CNR/spl sim/45 dB, dcerasability/spl sim/-40 dB). Relationship between the dynamic characteristics and crystal structure of the GaSbTe materials has been proposed.