The effect of high temperature annealing on 1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers grown by MBE

The effect of high temperature annealing on the characteristics in 1.55 /spl mu/m strained GaInAs/AlGaInAs MQW lasers were investigated for the first time. It was experimentally found that the threshold current densities didn't change by thermal annealing even at 800/spl deg/C, although the PL intensities were improved. We can say that the crystalline quality of GaInAs/AlGaInAs MQW doesn't degrade by thermal annealing even at 800/spl deg/C. The MQW structure disappeared completely by Zn diffusion at 500/spl deg/C. High performance narrow stripe laser can be fabricated by disordering of MQW using Zn diffusion technique.