Elaboration of III-V top cell for tandem cell with Silicon

We study GaInP alloy grown by molecular beam epitaxy (MBE) for single junctions solar cells. Growth was optimized to obtain a photo-conversion efficiency of 9.66%, without anti-reflection coating. Further characterization allowed the investigation of the remaining issues in the structures. Beryllium doped GaInP base layer was identified as the layer limiting the photo-conversion performance of the solar cells.