Novel growth methods of optoelectronic crystals based on antimonides

This work contributes to the growth of bulk crystals where crystals are grown from a molten-solution zone (MSZ). Our original modifications ofTHM have been used for a crystallization of GaSb and of (Ga.In)Sb—the ternary Solid Solution (TSS). The crystallization process has been accelerated with a low frequency and low energy vibrational stirring (VS). Lately, the stirring has been combined with the magneto-hydrodynamical stirring (MHD-S) and applied on GaSb. The lattice parameter ‘a’ ofTSS crystals has been constant throughout the significant part of the ingot length. This approach has permitted the growth of these crystalline ingots with ‘a’ apriori chosen and calculated—having the deviation from its constancy less than 0.03% (0.2 pm) with a 75 mm length. Crystals can have a mosaic structure at this stage.