Low-frequency generation–recombination noise in fully overlapped lightly doped drain MOSFETs

Abstract A model for generation–recombination (g–r) noise in FOLD MOSFET s is presented incorporating the field dependent mobility and the bias dependent series resistance. The g–r noise is due to the emission and capture of carriers in the space charge region in the bulk-channel junction. It is observed that noise power increases with increasing drain voltage and decreases with decreasing gate voltage. The results so obtained are compared with the experimental data.