Microscopic reflection difference spectroscopy for strain field of GaN induced by Berkovich nanoindentation

We have measured strain field of Berkovich nanoindentation by Raman mapping technique and microscopic reflection difference spectroscopy (μ-RDS). The validity of the μ-RDS method is verified by the accordance between the theoretical simulated result and the rotated measurement result. Comparing the two different methods, it is concluded that μ-RDS is sensitive and effective to measure anisotropic strain zone in the plane.