Study on chemical binding states of silicon in conjunction with ultra‐shallow plasma doping by using Hard X‐ray Photoelectron spectroscopy (HX‐PES)

We took HX‐PES measurement (Si 1s) on ultra shallow plasma doped silicon samples before and after spike RTA, flash lamp anneal (FLA) and all solid‐state laser anneal (ASLA) in SPring‐8 for the first time. After PD, the carrier density of n‐Si substrate decreased to intrinsic Si level due to defect induced carrier traps. After annealing by either spike RTA or FLA, the PD samples showed excellent chemical binding states with high impurity activation and recrystallization. After annealing by ASLA, PD samples showed ultimate high impurity activation at surface several nanometer layer.