Specific Features of Distribution and Relaxation of Elastic Stresses in Homoepitaxial CVD Films of Germanium and Diamond

The real structures of epitaxial CVD films of germanium and diamond have been comparatively analyzed. The influence of the specific features of elastic-stress distribution in two-layer structures on the relaxation processes and dislocation distribution are considered. The influence of inhomogeneous (over thickness) plastic deformation, caused by the motion of dislocations under alternating elastic-stress field, on the formation of residual bending of substrates and films is shown by the example of epitaxial germanium structures. A significant difference in the relaxation processes in CVD films of diamond and germanium (crystallographic analog of diamond) is revealed.