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Deembedding parasitic elements of GaN nanowire MESFETs by use of microwave measurements | NIST
Deembedding parasitic elements of GaN nanowire MESFETs by use of microwave measurements | NIST
2011
Dazhen Gu
Thomas M. Wallis
Paul T. Blanchard
Sang-Hyun Lim
Atif Imtiaz
Kristine A. Bertness
Norman A. Sanford
Pavel Kabos
Keywords:
NIST
Analytical chemistry
Physics
Nanowire
Microwave
Optoelectronics
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