Processing polymer dielectrics for improved performance of organic field-effect transistors

The charge carrier mobility in organic field-effect transistors (FETs) may be enhanced by a few orders of magnitude by an appropriate choice of the dielectric layer. Polymer ferroelectric dielectrics with their high dielectric constants are attractive for low-operating voltage FETs. However, due to the dynamic coupling of the charge carriers to the electronic polarization at the semiconductor-dielectric interface, polymer ferroelectric based organic FETs may result in low carrier mobilities. Selective electrical poling of the ferroelectric dielectric, poly(vinylidene fluoride trifluorethylene) (PVDF-TrFE), is seen to greatly improve the performance of small molecule and donor-acceptor copolymer based FETs [1]. A combination of vertical and lateral poling of the PVDF-TrFE layer, which reduces the gate leakage current as well as mitigates polarization fluctuation driven transport, yields carrier mobilities upwards of 1 cm2/Vs in TIPS-pentacene and 0.5 cm2/Vs in diketopyrrolopyrrole based FETs under ambient conditions [2]. Other strategies for improving the performance of FETs involve dissolving the ferroelectric polymer in high dipole moment solvents and adding thin polymer buffer layers. The incorporation of magnetic nanoparticles in non-ferroelectric dielectrics is yet another approach for enhancing the dielectric constant. Ferrite nanoparticles with biomimetic peptide nanostructures as gate dielectrics have ramifications in low-operating voltage organic FETs [3]. This work was supported by National Science Foundation under Grant No. ECCS-1707588 [1] Laudari et al. Adv. Mater. Interfaces 6, 1801787 (2019). [2] Laudari et al. ACS Appl. Mater. Interfaces 12, 26757 (2020). [3] Khanra et al. ACS Appl. Nano Mater 1, 1175 (2018).