Thyristor-based Memory and Method of fabricating the same

It has a cross-point structure, a memory device and a method of manufacturing a thyristor having a configuration is disclosed. It is patterned, a plurality of semiconductor layers on a substrate is formed, the cathode lines and anode lines are formed in different layers, perpendicular to the cross to each other. The point of intersection is patterned and personalize a memory cell is formed. Memory cell has a thyristor structure. This can improve the degree of integration of elements.