The investigation of the electrical characteristics and photo-response properties of the Al/(CMAT)/p-Si structures

Abstract In this study, the electrical and photo-response characteristics of the Al/(CMAT)/p-Si photodiode (the device) were reported. The photodiode properties of the device were examined under various illumination intensities at room temperature. It was observed that the prepared device has a good response to the illumination. The photoconductivity mechanism (PM) of the device at −2 V was examined and the slope of the PM was found to be 0.774. Also, the transient photocurrent-time (TPT) of the device was analyzed with the switching light on (100 mW/cm2) and switching the light off (dark). The experimental results of PM and TPT showed that the prepared device may be used in optoelectronic as well as photovoltaic applications. Furthermore, the dependent-temperature electrical properties were analyzed using the current (I)-voltage (V) measurement at various temperatures (90 K, 210 K, and 340 K) while the dependent-frequency electrical properties were analyzed using the capacitance-voltage (C–V) and the conductance-voltage (G/ω-V) data at various frequencies (4 kHz, 400 kHz, and 4 MHz). Since the interface states (Nss) affect the electrical parameters of the device, the Nss values of the device were examined using the high-low frequency capacitance (CLF-CHF) method. Additionally, the morphological properties of the CMAT film were examined using AFM and the root-mean-square (RMS) roughness value of the films was found to be 31.19 nm.