Tunable damping-like and field-like spin-orbit-torque in Pt/Co/HfO2 films via interfacial charge transfer

The spin–orbit-torque (SOT) consists of dampinglike torque (DLT) and fieldlike torque (FLT), where the combined effects of these two torques need further consideration for efficient SOT switching. Here, the tunable correlation between the DLT and FLT is investigated in Pt/Co/HfO2 multilayers with different annealing temperatures (Ta). With increasing Ta, the FLT decreases monotonously, while both the sign and the magnitude of DLT are changed. Interfacial analysis results reveal that the tunable correlation of them is strongly dependent on the interfacial electron structure between the Co and HfO2 layer. The interfacial charge transfer between the Co, O, and Hf atoms could modify interfacial spin–orbit coupling and the crystal electric field (ECEF), which promotes the interface-generated SOT. This work demonstrates an effective method to tune the correlation of the two SOT components, a desirable feature which will be beneficial for the design of SOT-based devices.The spin–orbit-torque (SOT) consists of dampinglike torque (DLT) and fieldlike torque (FLT), where the combined effects of these two torques need further consideration for efficient SOT switching. Here, the tunable correlation between the DLT and FLT is investigated in Pt/Co/HfO2 multilayers with different annealing temperatures (Ta). With increasing Ta, the FLT decreases monotonously, while both the sign and the magnitude of DLT are changed. Interfacial analysis results reveal that the tunable correlation of them is strongly dependent on the interfacial electron structure between the Co and HfO2 layer. The interfacial charge transfer between the Co, O, and Hf atoms could modify interfacial spin–orbit coupling and the crystal electric field (ECEF), which promotes the interface-generated SOT. This work demonstrates an effective method to tune the correlation of the two SOT components, a desirable feature which will be beneficial for the design of SOT-based devices.