A Novel Dual Electrode and Gate Extended Doping-less TunnelFET for RF Energy Harvesting

Currently, the performance of CMOS based RF to DC harvester circuit suffers with poor power conversion efficiency (PCE) and produces less DC output voltage. This is due to the CMOS performance limits and achieved a sub-threshold swing limitation of 60mV/dec. It demands a novel device with different physics and operating mechanism, especially to work under the condition of ultra-low power. To address this problem, a new dual electrode and gate extended Doping-less TFET (DE-GEDLTFET) have been developed especially for low power operation. It achieves a high ON state current of 1.69 x 10-5 A/µm at V gs =0.5V, off current leakage of 3.11 x 10-19 A/µm and SS of 16.5 mV/dec. A two stage Dickson multiplier topology based on DE-GEDLTFET harvester produces an output voltage and current of 1.3V and 13.2 µA @ 0 to-10 dBm. A high PCE of 62% is obtained @-16.5 dBm at input frequency of 900 MHz.