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Acemap > Paper > Improvement of β-Ga2O3 Junction Field-Effect Transistors By Employing WSe2/β-Ga2O3 p-n Heterojunction Via Laser-Assisted Oxidation

Improvement of β-Ga2O3 Junction Field-Effect Transistors By Employing WSe2/β-Ga2O3 p-n Heterojunction Via Laser-Assisted Oxidation

2021 
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