Old Web
English
Sign In
Acemap
>
Paper
>
Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide
Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide
2002
John R. Williams
G.Y. Chung
C. C. Tin
K. McDonald
D. Farmer
R.K. Chanana
Robert A. Weller
Sokrates T. Pantelides
O. W. Holland
Mrinal K. Das
L. C. Feldman
Keywords:
Metallurgy
Passivation
Nitric oxide
Materials science
Inorganic chemistry
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
19
Citations
NaN
KQI
[]