Comparison of CNTFET based 6T SRAM and MOSFET based 6T SRAM using Hspice.

The basic VLSI (Very Large Scale Integration) circuit element is Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Moore’s law states that, design performance improves by reduction in gate length. The gate length reduction is also known as scaling. The continuous scaling of the circuit design will cause issues related to electrical performance of the chip. The device fabrication creates major problems when the geometry reaches to nanometer region. For the same purpose, the researchers have found Carbon Nano-Tubes (CNT) as the new worthy candidate. The design of CNT defines its properties, either metallic conductor or semiconductor. The transistor made from CNT is referred as CNT Field Effect Transistor (CNTFET). In this paper, we have drawn comparison of 6T SRAM between MOSFETs and CNTFETs. Section-1 gives brief introduction of MOSFETs and CNTFETs whereas section-2 describes the detailed properties of CNTFETs and section-3 gives details about CNTFET model. Section-4 describes the detailed description about 6T SRAM Section-5 gives simulation results of 6T SRAM. Section-6 summarizes the paper and shows future prospects of CNTFETs’ usage. Keywords— CNTFET, MOSFET, Chirality, Graphene, 6T SRAM