Study of In2S3Thin Films by Diffraction of Synchrotron Radiation

Abstract The crystal structure of In 2 S 3 thin films obtained by the chemical vapor deposition method from the volatile complex compounds indium(III) isopropyl xanthate and indium(III) diethyl dithiocarbonate was studied by synchrotron radiation diffraction. High photon beam intensity (3×10 10 photons/mm 2 ·s) and the high angular resolution (0.02°) of the reflexes made it possible to study weak reflexes to analyze the phase composition of samples in more detail, to determine the size of the particles (the size of coherency), and to evaluate the stress at the microscopic level. It is shown that for indium sulfide films deposited at T =230°C, the structure is cubic ( α -In 2 S 3 ). For deposition temperatures T =250°C and higher, the structure is tetragonal ( β -In 2 S 3 ). During annealing an α – β phase transition was observed at T =400–420°C. For samples deposited at 430°C, a splitting of the (5,0,15) reflex was observed, which can be assigned to monoclinic or hexagonal distortions of the lattice.