SOI CMOS Technology with 360GHz f T NFET, 260GHz f T PFET, and Record Circuit Performance for Millimeter-Wave Digital and Analog System-on-Chip Applications

We present record-performance RF devices and circuits for an SOI CMOS technology, at 35 nm L poly . Critical RF/analog figure of merits in FET such as current gain cut-off frequency (f T ), 1/f noise, and high-frequency noise figure at various bias and temperature conditions are measured and modeled to enable high-performance circuit design. Measurement results show peak f T 's of 340 GHz and 240 GHz for 35 nm L poly NFET and PFET, respectively. At sub-35 nm L poly , 360 GHz f T NFET and 260 GHz f T PFET are demonstrated. High-Q, high-density vertical native capacitors (VNCAPs) and on-chip inductors are integrated. RF-operable ring oscillator (RFRO) demonstrates a 3.58 psec delay and a SSB phase noise of -107 dBc/Hz at 1 MHz offset. LC-tank VCO operates at 70 GHz with 9.5% tuning range. The maximum operating frequency of a static CML divider is 93 GHz while dissipating 52.4 mW.