Influence of lattice damage on retention and transport of deuterium in beta silicon carbide

Experiments were done to determine effect of lattice damage on solubility and transport of deuterium (D) in silicon carbide. Beta SiC samples were irradiated with energetic ions to produce lattice damage, and were then soaked in D{sub 2} gas at 1000C. Concentration of D versus depth was then measured by nuclear reaction analysis. Very near the surface (<0.5{mu}m), concentration of D was larger in irradiated than in unirradiated, but beyond 1 {mu}m the D concentrations were similar ({approximately}20{plus_minus}10 atomic ppM), even though the damage extended to 2.2 {mu}m in most of the samples. Results from this study of ion-irradiated SiC together with our previous study of tritium migration in undamaged SiC point to the conclusion that uptake of D from gas into SiC occurs by transport along grain boundaries, whereas uptake of D into lattice damage produced by ion irradiation, and release of energetically implanted D both require permeation of D within grains which is much slower.