A Highly Efficient 3.3-kV SiC-Si Hybrid Power Module with a Novel SiC JBS Diode and a Si Advanced Trench HiGT

Renichi Yamada,Norifumi Kameshiro,Yoshiaki Toyota,Takashi Hirao,Kan Yasui,Hidekatsu Onose,Kazuhiro Mochizuki,Hiroshi Miki,Natsuki Yokoyama,Hiroyuki Okino,Hiroyuki Matsuhima,Tetsuo Oda,Jiro Hasegawa,Mutsuhiro Mori

A Highly Efficient 3.3-kV SiC-Si Hybrid Power Module with a Novel SiC JBS Diode and a Si Advanced Trench HiGT

2016

Renichi Yamada
Norifumi Kameshiro
Yoshiaki Toyota
Takashi Hirao
Kan Yasui
Hidekatsu Onose
Kazuhiro Mochizuki
Hiroshi Miki
Natsuki Yokoyama
Hiroyuki Okino
Hiroyuki Matsuhima
Tetsuo Oda
Jiro Hasegawa
Mutsuhiro Mori

A 3.3-kV SiC-Si hybrid module, composed of a low-forward-voltage (VF) SiC junction-barrier-Schottky (JBS) diode and a low-saturation-voltage VCE(sat) Si trench IGBT was fabricated and demonstrated highly efficient operation.

Keywords:

Hybrid power
Materials science
Schottky diode
Insulated-gate bipolar transistor
Diode
Trench
Electronic engineering
Electrical engineering
Optoelectronics
trench igbt

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