Robustness of GaN vertical superjunction HEMT
2013
We have examined the robustness of the novel enhancement-mode GaN vertical superjunction HEMT using numerical simulations, which has been designed previously and projected to have best R on, sp of 4.2 mQ-cm 2 and BV of 12.4kV, and compared it with a GaN vertical HEMT with conventional drift region. The GaN vertical superjunction HEMT with 8 μm pillar width shows 7X higher on-state current level and 1/5 of the R on, sp compared with The simulated on-state breakdown voltage of the GaN vertical superjunction HEMT structure shows 4.5% drop from the off-state breakdown voltage, and is only slightly higher than the 1.7% drop of the conventional GaN vertical HEMT.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
9
References
1
Citations
NaN
KQI