Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma

Abstract Silicon nitride (Si 3 N 4 ) films have received great attention not only as dielectric materials for the gate dielectric of transistors and the insulator of capacitors, but also as a buffer layer and etch-stop layer for the semiconductor industry. As the applications of Si 3 N 4 film increase, the necessity of investigating a novel deposition process applicable at low temperature has emerged. In this regard, the plasma-enhanced atomic layer deposition (PEALD) technique is attractive as a promising process; however, the Si 3 N 4 film deposition process at growth temperatures less than 150 °C using PEALD has not been investigated. In this work, the growth behavior and chemistry of SiN x (x  2 formation by air exposure. Other chemical effects depending on chemical composition and electrical property were also examined in detail.