Development of Temperature-Stable RF Filters on Composite Substrates Based on a Single Crystal LiTaO3 Layer on Silicon
2019
In this paper, we present a new generation of substrates which address the demand for versatile intermediate-to-large-band surface acoustic wave devices and provides a unique solution for temperature-stable filter with excellent spectral qualities. The Piezoelectric-On-Insulator (POI) layer structure provides a breakthrough solution for addressing modern filter challenges on an extended range of specification. An implementation example is presented for a GPS filter at 1.575 GHz exhibiting a TCF smaller than 10 ppm.K-1
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