Atomic Layer Deposition of Tin Monosulfide Using Vapor from Liquid Bis(N, N′-diisopropylformamidinato)tin(II) and H2S

The oxide and sulfide of divalent tin show considerable promise for sustainable thin-film optoelectronics, as transparent conducting and light absorbing p-type layers, respectively. Chemical vapor deposition (CVD) and atomic layer deposition (ALD) provide attractive routes to these layers. The literature on volatile tin(II) compounds used as CVD or ALD precursors shows that new compounds can provide different growth rates, film morphologies, preferred crystallographic orientations, and other material properties. We report here the synthesis and characterization of a new liquid tin(II) precursor, bis(N, N′-diisopropylformamidinato)tin(II) (1), which is effective in ALD of SnS in combination with H2S between 65 and 180 °C. Like other highly reactive tin(II) precursors, the growth per cycle linearly decreases from 0.82 A/cycle at 65 °C to 0.4 A/cycle at 180 °C. This is obviously different from the case of previously reported SnS ALD using bis(2,4-pentanedionato)tin(II), Sn(acac)2, and H2S; films grow at 0.22...