High-thermal conductivity electronic packaging material and preparation method thereof

The invention belongs to the technical field of electronic packaging materials, and provides a high-thermal conductivity electronic packaging material and a preparation method thereof. The packaging material comprises a reinforcement body comprising diamond grains, pure copper powder and a third component, namely chromium, molybdenum, silicon, titanium or tungsten, wherein the volume percentage of the reinforcement body is 25 to 80 percent and that of the third component is 0.01 to 10 percent. The preparation method comprises the following steps: mixing the reinforcement body, the pure copper powder and the third component evenly in proportion, and reducing the mixture by hydrogen in a reducing furnace for 1 to 5 hours, at a temperature between 200 and 400 DEG C; feeding the mixed powder in a graphite die and treating the mixed powder by adopting a spark plasma sintering process; vacuumizing the graphite die, heating up the graphite die to between 700 and 1,100 DEG C at a rate of temperature increase of 50 to 200 DEG C/min and pressurizing the graphite die to between 20 and 50MPa; and carrying out heat preservation for 1 to 20 minutes when reaching a sintering temperature and then taking the packaging material out for demoulding after furnace cooling.