Design and analysis of a novel mixed accumulation/inversion mode FD SOI MOSFET
1997
In this paper, a new fully-depleted SOI MOSFET device is designed and analyzed, which combines the advantages of both the inversion mode and the accumulation mode devices: its performance is better than the inversion mode device, and its breakdown voltage higher than the accumulation mode device. Additionally, the new device results in better hot carrier reliability.
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