STRAIN RELAXATION IN SiGe VIRTUAL SUBSTRATE CHARACTERIZED BY HIGH RESOLUTION X-RAY DIFFRACTION

In this paper, with solid source molecular beam epitaxy technique, Si1-xGex(SiGe) virtual substrates were deposited on low-temperature-grown Si (LT-Si) buffer layer, which was doped with Sb. The strain in SiGe virtual substrate was characterized by high resolution X-ray diffraction. Results indicated that Sb-doping in LT-Si can effectively modulate the degree of strain relaxation in SiGe virtual substrate. The segregated Sb on the surface of LT-Si layer acts as surfactant and results in abrupt strain relaxation.