18 GHz 3 dB bandwidth SiGe resonant photodetector in 45 nm SOI CMOS

We present a SiGe resonant photodetector fabricated in commercial 45 nm SOI CMOS with a 3-dB bandwidth of 17.8 GHz, the highest reported for such devices. This is achieved by using high doping concentrations to reduce the resistance of the regions accessing the active area.