Current Conduction Model of Depletion-Mode N-type Nanowire Field-Effect Transistors (NWFETS)

This paper introduces a compact analytical current conduction model of long-channel depletion-mode n-type nanowire field-effect transistors (NWFETs). The NWFET used in this work was fabricated with the bottom-up process and it has a bottom-gate structure. The model includes all current conduction mechanisms of the NWFET operating at various bias conditions. The results simulated from the newly developed NWFET model reproduce a reported experimental results within a 10% error.