Ultra-high Q Ba(Mg1/3Ta0.675)O3 microwave dielectric ceramics realized by slowly cooling step process and the simulation design for hairpin dielectric filters

Abstract With the development of 5G technology, it would inevitably lead to the problem of energy consumption owing to the massive construction of 5G base stations and the increase in the number of antenna channels. Dielectric filters as the core component in the base station, the energy consumption was closely related to its insertion loss, which could be achieved by reducing the dielectric loss (tanδ = 1/Q) of microwave dielectric ceramics. In this work, in order to further enhance the Q × f value, the slowly cooling step process was innovatively introduced to the Ba(Mg1/3Ta0.675)O3 ceramic. The optimal microwave dielectric properties were obtained in Ba(Mg1/3Ta0.675)O3 ceramic with the step temperature of 1500 °C: er = 24.767, Q × f = 298,051 GHz, τf = −0.66 ppm/°C. Based on ultra-high Q Ba(Mg1/3Ta0.675)O3 ceramic, the hairpin dielectric filter with high integration and low insertion loss was designed and simulated. Compared with traditional RT/duroid5870 dielectric substrate, the circuit area was reduced by more than 6 times and the passband insertion loss (|S21|