Discrete memristive levels and logic gate applications of Nb2O5 devices

ABSTRACT Controlled resistive switching behavior has shown potential for brain-inspired functionalities and feasibility for multi-functional photelectric sensors. For the first time, bias-polarity dependent switching characteristic is observed in forming-free W/Nb2O5/(Pt, ITO) sandwiched structures. When voltage bias was applied to the W electrode, a multi-level cell (MLC) with more than two switching states was observed while a single-level (SLC) with binary switching states was observed with Pt or ITO biasing electrode. Moreover, devices with Pt electrodes exhibit higher SET voltages (>1) while devices with ITO electrodes exhibit lower SET voltages (