A Single-Electron Injection Device for CMOS Charge Qubits Implemented in 22 nm FD-SOI

This brief presents a single-electron injection device for position-based charge qubit structures implemented in 22 nm FD-SOI CMOS. Quantum dots are implemented in local well areas separated by tunnel barriers controlled by gate terminals overlapping with a thin 5 nm undoped silicon film. Interface of the quantum structure with classical electronic circuitry is provided with single-electron transistors that feature doped wells on the classic side. A small 0.7×0.4 μm elementary quantum core is co-located with control circuitry inside the quantum operation cell which is operating at 3.5 K and a 2 GHz clock frequency. With this apparatus, we demonstrate a single electron injection into a quantum dot.