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Lek Baubutr
Lek Baubutr
Optoelectronics
Diode
Materials science
Chemistry
Analytical chemistry
3
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1.2-kV Vertical GaN Fin-JFETs: High-Temperature Characteristics and Avalanche Capability
2021
IEEE Transactions on Electron Devices
Jingcun Liu
Ming Xiao
Ruizhe Zhang
Subhash Pidaparthi
Hao Cui
Andrew P. Edwards
Michael Craven
Lek Baubutr
Cliff Drowley
Yuhao Zhang
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Citations (8)
Surge Current and Avalanche Ruggedness of 1.2 kV Vertical GaN p-n Diodes
2021
IEEE Transactions on Power Electronics
Jingcun Liu
Ruizhe Zhang
Ming Xiao
Subhash Pidaparthi
Hao Cui
Andrew P. Edwards
Lek Baubutr
Cliff Drowley
Yuhao Zhang
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Citations (4)
Trap-Mediated Avalanche in Large-Area 1.2 kV Vertical GaN p-n Diodes
2020
IEEE Electron Device Letters
Jingcun Liu
Ming Xiao
Ruizhe Zhang
Subhash Pidaparthi
Cliff Drowley
Lek Baubutr
Andrew P. Edwards
Hao Cui
Charles Coles
Yuhao Zhang
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Citations (12)
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