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Isamu Akasaki

Meijo University
Nagoya University

919

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18188

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Analysis of AlGaN UVB LD to reduce threshold current density

2021 The Japan Society of Applied Physics
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Morphology Control and Crystalline Quality of p-Type GaN Shells Grown on Coaxial GaInN/GaN Multiple Quantum Shell Nanowires.

2021 ACS Applied Materials & Interfaces
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Enhanced penetration depth of surface passivation in porous fluorescent 6H-SiC with Si/C-faces

2021
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Color-tunable emission in coaxial GaInN/GaN multiple quantum shells grown on three-dimensional nanostructures

2021 Applied Surface Science
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Crystal growth of n-GaN on nanowire-based light emitter including multiple-quantum-shell and tunnel junction

2021
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Characterizations of impurity doping in GaN crystal for the realization of nanowire-LD using GaInN/GaN multiple-quantum shell/tunnel junction

2021 The Japan Society of Applied Physics
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Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes

2021 Journal of Crystal Growth
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MOVPE growth of Si-doped GaN cap layers embedding GaN nanowires with multiple-quantum shells

2021 Journal of Crystal Growth
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AlGaN-based UV-B laser diode with a high optical confinement factor

2021 Applied Physics Letters
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Discrete AlN mole fraction observed in AlGaN Layer with Dense Macrosteps (1)

2021 The Japan Society of Applied Physics
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